In this research, the semiconductormaterial CdSe thin films were prepared by the chemical bath deposition (CBD)method, and characterized by XRD (x-ray diffraction), PL (photoluminescence)techniques, SEM (scanning electron microscopic) and UV visible. Investigated PLstudy observed emission and excitation spectra in different wavelengths indifferent ranges of UV and calculated light yields. They are for near UV-basedLEDs and display devices. Powder X-ray diffraction revealed a cubic phase ofCdSe nanocrystalline thin film with a preferred orientation along the (111)plane. The SEM micrographs showed the film surface was composed of sphericallyshaped grains over the entire glass substrate.[2] Optical band gap energy Eg ofCdSe thin film decreased from 1.43 eV to 1.20 eV with Ni-Co dual doping and thelowest value of Eg was 1.20 eV for the sample at the same molar ratios of Niand Co (0.04-0.04). Ni-Co dual doping of CdSe thin film improved its propertiesto be used as a solar cell.[3] The SEM studies showed some layered growth offilms along with few fibres and XRD results show the polycrystalline nature ofthe films.[4]

Key words: CBD, EDX, PL, SEM, X-RayDiffraction.